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| ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V : RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package D G S Applications * * * * * DC-DC converters Power management functions Disconnect switches Motor control Class D audio output stages Ordering information Device ZXMN7A11GTA ZXMN7A11GTC Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 Device marking ZXMN 7A11 Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN7A11G Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS=10V; TA=25C(b) @ VGS=10V; TA=70C(b) @ VGS=10V; TA=25C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25C (a) Linear derating factor Power dissipation at TA =25C(b) Linear derating factor Operating and storage temperature range IDM IS ISM PD Symbol VDSS VGS ID Limit 70 20 3.8 3.0 2.7 10 5 10 2 16 3.9 31 -55 to +150 Unit V V A A A A A A W mW/C W mW/C C PD Tj, Tstg Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 62.5 32 Unit C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10 s - pulse width limited by maximum junction temperature. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN7A11G Characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN7A11G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-source breakdown voltage Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) Forward transconductance Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching ()() Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge Total gate charge Gate-source charge Gate drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time () Reverse recovery charge () (*)() Symbol V(BR)DSS Min. 70 Typ. Max. Unit V Conditions ID= 250 A, VGS=0V VDS= 70V, VGS=0V VGS=20V, VDS=0V ID= 250 A, VDS=VGS VGS= 10V, ID= 4.4A VGS= 4.5V, ID = 3.8A VDS= 15V, ID= 4.4A Zero gate voltage drain current IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qg Qgs Qgd VSD trr Qrr 4.66 1.0 1 100 0.13 0.19 A nA V S 298 35 21 pF pF pF VDS= 40V, VGS=0V f=1MHz 1.9 2 11.5 5.8 4.35 7.4 1.06 1.8 0.85 19.8 14 0.95 ns ns ns ns nC nC nC nC V ns nC VDS=35V, VGS= 10V ID= 4.4A VDS= 35V, VGS= 5V ID= 4.4A VDD= 35V, ID= 1A RG6.0 , VGS= 10V Tj=25C, IS= 2.5A, VGS=0V Tj=25C, IS= 2.5A, di/dt=100A/ s NOTES: 300 s; duty cycle 2%. (*) Measured under pulsed conditions. Pulse width () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN7A11G Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN7A11G Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMN7A11G Intentionally left blank Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN7A11G Package outline - SOT223 DIM A A1 b b2 C D Millimeters Min 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 - Inches Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 DIM e e1 E E1 L - Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 - Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com |
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